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| KOM 2100 B KOM 2100 BF 6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array KOM 2100 B KOM 2100 BF Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from q q q q Bereich von 400 nm bis 1100 nm (KOM 2100 B) und bei 880 nm (KOM 2100 BF) Kurze Schaltzeit (typ. 13 ns) Kathode = Chipunterseite Geeignet fur Diodenbetrieb (mit Vorspannung) und Elementbetrieb SMT-fahig q q q q 400 nm to 1100 nm (KOM 2100 B) and of 880 nm (KOM 2100 BF) Short switching time (typ. 13 ns) Cathode = back contact Available as photodiode with reverse voltage or photovoltaic cell Suitable for SMT Anwendungen q Universell, z.B. Drehwinkelgeber Applications q General-purpose, e.g. encoders Typ Type KOM 2100 B KOM 2100 BF Bestellnummer Ordering Code Q62702-K35 Q62702-K34 Gehause Package Platine mit SMT-Flanken, Abdeckrahmen mit klarem bzw. schwarzem Epoxyvergu pcb with SMT flanks, cover frame sealed with transparent or black epoxy Semiconductor Group 469 10.95 feof6529 feo06529 KOM 2100 B KOM 2100 BF Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 80 20 150 Einheit Unit C V mW TA; Tstg VR Ptot Kennwerte (TA = 25 C, = 950 nm) fur jede Einzeldiode Characteristics (TA = 25 C, = 950 nm) per single diode Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 0.5 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Wert Value KOM 2100 B KOM 2100 BF 8.5 ( 6.6) A 9 ( 7) Einheit Unit S S max 870 400 ... 1100 870 730 ... 1100 nm nm S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfinlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Verguoberflache Distance chip front to case seal Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity A LxB LxW H 2.5 1 x 2.5 2.5 1 x 2.5 mm2 mm x mm 0.4 ... 0.6 0.4 ... 0.6 mm 60 1 ( 10) 0.68 60 1 ( 10) 0.64 Grad deg. nA A/W IR S Semiconductor Group 470 KOM 2100 B KOM 2100 BF Kennwerte (TA = 25 C, = 950 nm) fur jede Einzeldiode Characteristics (TA = 25 C, = 950 nm) per single diode Bezeichnung Description Quantenausbeute Quantum yield Maximale Abweichung der Fotoempfindlichkeit vom Mittelwert Max. deviation of the system spectral sensitivity from the average Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Anstiegszeit/Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 , VR = 10 V; = 850 nm; IP = 800 A Durchlaspannung, IF = 100 mA; E = 0 Forward voltage Kapazitat Capacitance VR = 0 V; f = 1 MHz; E = 0 Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von IP Temperature coefficient of IP Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol S Wert Value KOM 2100 B 0.9 10 KOM 2100 BF 0.85 10 Electrons Photon % Einheit Unit ISC VO t r, t f 8.5 320 ( 250) 13 8 320 ( 250) 13 A mV ns VF C0 1.2 25 1.2 25 V pF TCV TCI NEP - 2.6 0.18 2.6 x 10-14 - 2.6 0.18 2.8 x 10-14 mV/K %/K W Hz cm * Hz W D* 6.1 x 1012 5.7 x 1012 Semiconductor Group 471 KOM 2100 B KOM 2100 BF Relative spectral sensitivity KOM 2100 B, Srel = f () Relative spectral sensitivity KOM 2100 BF, Srel = f () Photocurrent, IP = f (Ee); VR = 5 V, Open-circuit voltage VO= f (Ee) Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E=0 Capacitance C = f (VR), f = 1 MHz, E = 0 Directional characteristics Srel = f () Dark current IR = f (TA), VR = 10 V, E = 0 Semiconductor Group 472 |
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